maximum ratings (sot-563 package): (t a =25c) symbol units power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings q1: (t a =25c) symbol units drain-source voltage v ds 60 v drain-gate voltage v dg 60 v gate-source voltage v gs 40 v continuous drain current i d 280 ma continuous source current (body diode) i s 280 ma maximum pulsed drain current i dm 1.5 a maximum pulsed source current i sm 1.5 a maximum ratings d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a electrical characteristics q1: (t a =25c unless otherwise noted) symbol test conditions min max units i gssf v gs =20v, v ds =0v 100 na i gssr v gs =20v, v ds =0v 100 na i dss v ds =60v, v gs =0v 1.0 a i dss v ds =60v, v gs =0v, t j =125c 500 a i d(on) v gs =10v, v ds 2v ds(on) 500 ma bv dss v gs =0v, i d =10a 60 v v gs(th) v ds =v gs , i d =250a 1.0 2.5 v v ds(on) v gs =10v, i d =500ma 1.0 v v ds(on) v gs =5.0v, i d =50ma 0.15 v r ds(on) v gs =10v, i d =500ma 2.0 ? r ds(on) v gs =10v, i d =500ma, t j =125c 3.5 ? r ds(on) v gs =5.0v, i d =50ma 3.0 ? r ds(on) v gs =5.0v, i d =50ma, t j =125c 5.0 ? g fs v ds 2v ds(on) , i d =200ma 80 mmhos CMLM0205 multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode sot-563 case central semiconductor corp. tm r0 (12-october 2004) description: the central semiconductor CMLM0205 is a multi discrete module ? consisting of a single n-channel mosfet and a low v f schottky diode packaged in a space saving picomini? sot-563 case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. ? combination: n-channel mosfet and low v f schottky diode. marking code: c25 tm
central semiconductor corp. tm CMLM0205 multi discrete module ? surface mount n-channel mosfet and low v f silicon schottky diode r0 (12-october 2004) electrical characteristics q1 (continued) symbol test conditions min max units c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf t on v dd =30v, v gs =10v, i d =200ma, 20 ns t off r g =25 ? , r l =150 ? 20 ns v sd v gs =0v, i s =400ma 1.2 v electrical characteristics d1 (t a =25c) i r v r = 10v 20 a i r v r = 30v 100 a bv r i r = 500a 40 v v f i f = 100a 0.13 v v f i f = 1.0ma 0.21 v v f i f = 10ma 0.27 v v f i f = 100ma 0.35 v v f i f = 500ma 0.47 v c t v r = 1.0v, f=1.0 mhz 50 pf a b c h g f d e e r0 12 3 65 4 sot-563 - mechanical outline lead code: 1) gate q1 2) source q1 3) cathode d1 4) anode d1 5) anode d1 6) drain q1 marking code: c25
|
